|
Title |
Associate Professor |
Graduating School 【 display / non-display 】
-
Osaka Institute of Technology Faculty of Engineering JAPAN
Graduate School 【 display / non-display 】
-
Osaka University Graduate School, Division of Engineering Master's Course Completed JAPAN
-
Osaka University Graduate School, Division of Engineering Doctor's Course Completed JAPAN
Research field 【 display / non-display 】
-
Electron device/Electronic equipment
Papers 【 display / non-display 】
-
Photoluminescence study of {311} defect-precursors in self-implanted silicon
H. Tsuji, R. Kim, T. Hirose, T. Shano, Y. Kamakura, and K. Taniguchi ( Multiple Authorship )
Materials Science and Engineering: B 91/92 ( 30 ) 43 - 45 2002.04
Research paper (scientific journal) English
-
Atomic configuration study of implanted F in Si based on experimental evidence and ab initio calculations
H. Tsuji, R. Kim, T. Hirose, T. Shano, Y. Kamakura, and K. Taniguchi ( Multiple Authorship )
Materials Science and Engineering: B 91/92 ( 30 ) 148 - 151 2002.04
Research paper (scientific journal) English
-
Influences of point and extended defects on As diffusion in Si
R. Kim, T. Hirose, T. Shano, H. Tsuji, and K. Taniguchi ( Multiple Authorship )
Japanese Journal of Applied Physics 41 ( 1 ) 227 - 231 2002.01
Research paper (scientific journal) English
-
Anomalous phosphorus diffusion in Si during postimplantation annealing
R. Kim, Y. Furuta, S. Hayashi, T. Hirose, T. Shano, H. Tsuji, and K. Taniguchi ( Multiple Authorship )
Applied Physics Letters 78 ( 24 ) 3818 - 3820 2001.06
Research paper (scientific journal) English
-
Boron segregation to extended defects induced by self-ion implantation into silicon
J. Xia, T. Saito, R. Kim, T. Aoki, Y. Kamakura, and K. Taniguchi ( Multiple Authorship )
Journal of Applied Physics 85 ( 11 ) 7597 - 7603 1999.06
Research paper (scientific journal) English
Industrial Property 【 display / non-display 】
-
Front end device
Patent
Registration number：CN103812520
Applicant country：CHINA
Registration date：2015.12.02
-
High-frequency amplifier, and transmission/reception system
Patent
Registration number：CN101156316
Applicant country：CHINA
Registration date：2011.09.07
Presentations 【 display / non-display 】
-
Directivity Improvement of Directional Coupler with Adaptive Complex Termination Impedance
Keisuke Ninomiya , Yuta Miyazaki , Kazuhito Osawa , Kenta Seki , Ryangsu Kim
International conference Asia-Pacific Microwave Conference (APMC) 2023 Oral Presentation(general)
2023.12 -
Dual-Band Single-Output WLAN Directional Coupler in a SOI CMOS Process
Ryangsu Kim, Kenta Seki, Kazuhito Osawa
International conference IMFEDK 2022 Oral Presentation(general)
2022.11 -
A 10.8mA Single Chip Transceiver for 430MHz Narrowband Systems in 0.15um CMOS
G. Hayashi, A. Sawada, T. Morie, K. Matsuyama, Ryangsu Kim, S. Yoshida, A. Matsumoto, K. Hijikata, K. Matsukawa, Y. Tamura, Jun Ogawa, T. Takita
International conference ISSCC 2006 Oral Presentation(general)
2006.02 -
Realization of ultra-shallow junction: suppressed boron diffusion and activation by optimized fluorine co-implantation
T. Shano, R. Kim, T. Hirose, Y. Furuta, H. Tsuji, M. Furuhashi, K. Taniguchi
International conference IEDM 2001 Oral Presentation(general)
2001.12 -
Modeling of arsenic transient enhanced diffusion and background boron segregation in low-energy As+ implanted Si
Ryangsu Kim, T. Aoki, T. Hirose, Y. Furuta, S. Hayashi, T. Shano, K. Taniguchi
International conference IEDM 2000 Oral Presentation(general)
2000.12