Yoshimori Kaneshiro

写真a

Title

Associate Professor
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Graduating School 【 display / non-display 】

  • Osaka Institute of Technology   Faculty of Engineering   JAPAN

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Graduate School 【 display / non-display 】

  • Osaka University  Graduate School, Division of Engineering  Master's Course  Completed  JAPAN

  • Osaka University  Graduate School, Division of Engineering  Doctor's Course  Completed  JAPAN

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Committee Memberships 【 display / non-display 】

  • 2007.04
    -
    2009.11

     

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Research field 【 display / non-display 】

  • Electron device/Electronic equipment

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Papers 【 display / non-display 】

  • Directivity Improvement of Directional Coupler with Adaptive Complex Termination Impedance

    Keisuke Ninomiya, Yuta Miyazaki, Kazuhito Osawa, Kenta Seki, Ryangsu Kim  ( Multiple Authorship )

    IEEE Asia-Pacific Microwave Conference (APMC) 2023     2023.12

    Research paper (international conference proceedings)  English

  • Dual-Band Single-Output WLAN Directional Coupler in a SOI CMOS Process

    Ryangsu Kim, Kenta Seki, Kazuhito Osawa  ( Multiple Authorship )

    IEEE International Meeting for Future of Electron Devices (IMFEDK) 2022     2022.11

    Research paper (international conference proceedings)  English

  • A 10.8mA Single Chip Transceiver for 430MHz Narrowband Systems in 0.15um CMOS

    G. Hayashi, A. Sawada, T. Morie, K. Matsuyama, Ryangsu Kim, S. Yoshida, A. Matsumoto, K. Hijikata, K. Matsukawa, Y. Tamura, Jun Ogawa, T. Takita  ( Multiple Authorship )

    IEEE ISSCC 2006     2006.02

    Research paper (international conference proceedings)  English

  • Analysis of kink concentration during low-temperature annealing of low-energy implanted boron

    Yoshikazu Furuta, Ryangsu Kim, Jianxin Xia, Takenori Aoki, Tomoya Saito, Yoshinari Kamakura, Kenji Taniguchi  ( Multiple Authorship )

    Electronics and Communications in Japan (Part II: Electronics)   85 ( 5 ) 29 - 34   2002.04

    Research paper (scientific journal)  English

  • Atomic configuration study of implanted F in Si based on experimental evidence and ab initio calculations

    H. Tsuji, R. Kim, T. Hirose, T. Shano, Y. Kamakura, and K. Taniguchi  ( Multiple Authorship )

    Materials Science and Engineering: B   91/92 ( 30 ) 148 - 151   2002.04

    Research paper (scientific journal)  English

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Industrial Property 【 display / non-display 】

  • Front end device

    Patent

    Registration number：CN103812520

    Applicant country：CHINA 

    Registration date：2015.12.02

  • High-frequency amplifier, and transmission/reception system

    Patent

    Registration number：CN101156316

    Applicant country：CHINA 

    Registration date：2011.09.07

  • Directional Coupler

    Patent

    Registration number：CN113746445

    Applicant country：CHINA 

    Registration date：2024.10.22

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Research Grants and Projects 【 display / non-display 】

  • Project Year：2024.04  -  2025.03 

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Presentations 【 display / non-display 】

  • Directivity Improvement of Directional Coupler with Adaptive Complex Termination Impedance

    Keisuke Ninomiya , Yuta Miyazaki , Kazuhito Osawa , Kenta Seki , Ryangsu Kim

    International conference  Asia-Pacific Microwave Conference (APMC) 2023  Oral Presentation(general)

    2023.12
    　
    　

  • Dual-Band Single-Output WLAN Directional Coupler in a SOI CMOS Process

    Ryangsu Kim, Kenta Seki, Kazuhito Osawa

    International conference  IMFEDK 2022  Oral Presentation(general)

    2022.11
    　
    　

  • A 10.8mA Single Chip Transceiver for 430MHz Narrowband Systems in 0.15um CMOS

    G. Hayashi, A. Sawada, T. Morie, K. Matsuyama, Ryangsu Kim, S. Yoshida, A. Matsumoto, K. Hijikata, K. Matsukawa, Y. Tamura, Jun Ogawa, T. Takita

    International conference  ISSCC 2006  Oral Presentation(general)

    2006.02
    　
    　

  • Photoluminescence and ab initio study of {311} defect nucleation in Si

    H. Tsuji, R. Kim; T. Hirose; M. Furuhashi; M. Tachi; K. Taniguchi

    International conference  International Workshop on Junction Technology  ( Toyo, Japan )  Oral Presentation(general)

    2002.12
    　
    　

  • Realization of ultra-shallow junction: suppressed boron diffusion and activation by optimized fluorine co-implantation

    T. Shano, R. Kim, T. Hirose, Y. Furuta, H. Tsuji, M. Furuhashi, K. Taniguchi

    International conference  IEDM 2001  Oral Presentation(general)

    2001.12
    　
    　

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