Yoshimori Kaneshiro

写真a

Title

Associate Professor
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Graduating School 【 display / non-display 】

  • Osaka Institute of Technology   Faculty of Engineering   JAPAN

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Graduate School 【 display / non-display 】

  • Osaka University  Graduate School, Division of Engineering  Master's Course  Completed  JAPAN

  • Osaka University  Graduate School, Division of Engineering  Doctor's Course  Completed  JAPAN

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Committee Memberships 【 display / non-display 】

  • 2007.04
    -
    2009.11

     

  • 2025.06
    -
    2028.06

     

  • 2025.12
    -
    Now

     

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Research field 【 display / non-display 】

  • Electron device/Electronic equipment

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Papers 【 display / non-display 】

  • Wideband Directional Coupler with Phase Shifters in Standard Bulk CMOS for RF Front-End Modules

    Sota Takigawa, Yoshimori Ryangsu Kaneshiro  ( Multiple Authorship )

    IEEE Asia-Pacific Microwave Conference (APMC) 2026     2026.11

    Research paper (international conference proceedings)  English

  • A Standard-Cell-Based Comparator with DAC-Assisted Offset Cancellation Operating Down to 0.25 V for Energy Harvesting Devices

    Koki Kiyota, Yoshimori Ryangsu Kaneshiro  ( Multiple Authorship )

    IEEE Asia Pacific Conference on Circuits and Systems (APCCAS) 2026     2026.10

    Research paper (international conference proceedings)  English

  • A 180nm CMOS Rectifier with Adaptive Self- Biasing for High-Efficiency RF Energy Harvesting

    Daiki Fujimori, Shimpei Imoto, Yoshimori Ryangsu Kaneshiro  ( Multiple Authorship )

    IEEE Wireless Power Technology Conference and Expo (WPTCE) 2026     2026.07

    Research paper (international conference proceedings)  English

  • Modeling Methods and Predicting Spur Levels for Mutually Coupled Phase-locked Loops

    Tsutomu YOSHIMURA, Ryuji KOMABAYASHI, Yoshimori Ryangsu KANESHIRO  ( Multiple Authorship )

    IEICE TRANSACTIONS on Electronics     2026.05

    Research paper (scientific journal)  English

    DOI

  • Low Loss Directional Coupler with Dual Phase Shifters for sub-6 GHz RF Front-End Modules

    Yoshimori Ryangsu KANESHIRO, Tatsuki OMURO  ( Multiple Authorship )

    IEICE TRANSACTIONS on Electronics   E109-C ( 2 ) 80 - 83   2026.02

    Research paper (scientific journal)  English

    DOI

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Industrial Property 【 display / non-display 】

  • Front end device

    Patent

    Registration number：CN103812520

    Applicant country：CHINA 

    Registration date：2015.12.02

  • High-frequency amplifier, and transmission/reception system

    Patent

    Registration number：CN101156316

    Applicant country：CHINA 

    Registration date：2011.09.07

  • Directional coupler, high-frequency module, and communication device

    Patent

    Registration number：CN118451605A

    Applicant country：CHINA 

    Registration date：2024.08.06

  • Directional Coupler

    Patent

    Registration number：CN113746445

    Applicant country：CHINA 

    Registration date：2024.10.22

  • Directional coupler

    Patent

    Registration number：CN113853711

    Applicant country：CHINA 

    Registration date：2021.12.28

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Research Grants and Projects 【 display / non-display 】

  • Project Year：2026.04  -  2027.03 

  • Project Year：2024.04  -  2025.03 

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Presentations 【 display / non-display 】

  • Directivity Improvement of Directional Coupler with Adaptive Complex Termination Impedance

    Keisuke Ninomiya , Yuta Miyazaki , Kazuhito Osawa , Kenta Seki , Ryangsu Kim

    International conference  Asia-Pacific Microwave Conference (APMC) 2023  Oral Presentation(general)

    2023.12
    　
    　

  • Dual-Band Single-Output WLAN Directional Coupler in a SOI CMOS Process

    Ryangsu Kim, Kenta Seki, Kazuhito Osawa

    International conference  IMFEDK 2022  Oral Presentation(general)

    2022.11
    　
    　

  • A 10.8mA Single Chip Transceiver for 430MHz Narrowband Systems in 0.15um CMOS

    G. Hayashi, A. Sawada, T. Morie, K. Matsuyama, Ryangsu Kim, S. Yoshida, A. Matsumoto, K. Hijikata, K. Matsukawa, Y. Tamura, Jun Ogawa, T. Takita

    International conference  ISSCC 2006  Oral Presentation(general)

    2006.02
    　
    　

  • Photoluminescence and ab initio study of {311} defect nucleation in Si

    H. Tsuji, R. Kim; T. Hirose; M. Furuhashi; M. Tachi; K. Taniguchi

    International conference  International Workshop on Junction Technology  ( Toyo, Japan )  Oral Presentation(general)

    2002.12
    　
    　

  • Realization of ultra-shallow junction: suppressed boron diffusion and activation by optimized fluorine co-implantation

    T. Shano, R. Kim, T. Hirose, Y. Furuta, H. Tsuji, M. Furuhashi, K. Taniguchi

    International conference  IEDM 2001  Oral Presentation(general)

    2001.12
    　
    　

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