KOYAMA.Masatoshi

写真a

Title

Associate Professor

Research Fields, Keywords

Semiconductor engineering, Semiconductor devices, Physics of semiconductor, Semiconductor manufacturing processes
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Graduating School 【 display / non-display 】

  • Osaka Institute of Technology   Faculty of Engineering   Department of Electrical and Electronic Systems Engineering   Others

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Graduate School 【 display / non-display 】

  • Osaka Institute of Technology  Graduate School of Engineering  Electrical and Electronic Engineering  Doctor's Course  Completed  Others

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Degree 【 display / non-display 】

  • Osaka Institute of Technology -  Doctor(Engineering)  Physics of Semiconductor, Devices

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Association Memberships 【 display / non-display 】

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    The Electrochemical Society  Others

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Committee Memberships 【 display / non-display 】

  • 2021.04
    -
    Now

     

  • 2018.06
    -
    Now

     

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Research field 【 display / non-display 】

  • Semiconductor engineering

  • Electron device/Electronic equipment

  • Physics of semiconductors

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Papers 【 display / non-display 】

  • Repeated bending durability evaluation of ZnO and Al-doped ZnO thin films grown on cyclo-olefin polymer for flexible oxide device applications

    K Oura, T Kumatani, H Wada, M Koyama, T Maemoto, S Shigehiko  ( Multiple Authorship )

    Japanese Journal of Applied Physics     2022.09

    Research paper (scientific journal)  English

    DOI

  • Decay time extension of terahertz electromagnetic waves emitted from coherent longitudinal optical phonons in GaAs epitaxial layers with the use of fast atom bombardment

    HIDEO TAKEUCHI, YUTO OMUKU, RYOTA ONODA, TOSHIHIRO NAKAOKA, JUN UTSUMI, SHIGEO KAWASAKI, MASATOSHI KOYAMA  ( Multiple Authorship )

    Optics Continuum     2022.09

    Research paper (scientific journal)  English

    DOI

  • Improved electrical performance of solution-processed zinc oxide-based thin-film transistors with bilayer structure

    Kazuyori Oura, Hideo Wada, Masatoshi Koyama, Toshihiko Maemoto, and Shigehiko Sasa  ( Multiple Authorship )

    Journal of Information Display   23   105 - 113   2021.12

    Research paper (scientific journal)  English

    DOI

  • Impact of optical absorption for THz radiation in GaSb/InAs heterostructures

    R. Ohashi, D. Shimada, M. Koyama, T. Maemoto, S. Sasa, F. Murakami, H. Murakami, M. Tonouchi  ( Multiple Authorship )

    2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)     2021.03

    Research paper (international conference proceedings)  English

    DOI

  • Development of terahertz optical sources for an excitation wavelength of 1.56 μm

    Daichi Shimada, Ryota Ohashi, Masatoshi Koyama, Toshihiko Maemoto, Shigehiko Sasa, Kosuke Okada, Hironaru Murakami, Masayoshi Tonouchi  ( Multiple Authorship )

    2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)     2021.03

    Research paper (international conference proceedings)  English

    DOI

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Research Grants and Projects 【 display / non-display 】

  • Project Year：2021.04  -  2024.03 

  • Project Year：2020.04  -  2024.03 

  • Project Year：2019.04  -  2022.03 

  • Project Year：2017.04  -  2021.03 

  • Project Year：2017.04  -  2020.03 

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Presentations 【 display / non-display 】

  • Study for enhanced THz radiation using InGaSb/InAs heterostructures

    Yoshiyuki Takagi, Takayuki Hasegawa, Masatoshi Koyama, Toshihiko Maemoto, and Shigehiko Sasa

    International conference  14th Topical Workshop on Heterostructure Microelectronics  ( Hiroshima )  Poster (general)

    2022.08
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    2022.09

  • Can longitudinal optical phonons obtain longer decay time by introducing defects with the use of surface treatments? A terahertz time-domain spectroscopic study on GaAs epilayers

    HideoTakeuchi, Yuto Omuku, Ryota Onoda, Toshihiro Nakaoka, Jun Utsumi, Shigeo Kawasaki , Masatoshi Koyama

    International conference  International Conference on the Physics of Semiconductors 2022  ( Sydney, Australia )  Poster (general)

    2022.06
    　
    　

  • HZOバッファ層を用いたMOD法によるR 面サファイア基板上への VO2 薄膜の作製

    豊田和晃, 扶川 泰斗, 大内 涼介, 小池 一歩, 小山 政俊, 和田英男, 河原正美

    Internal meeting  第30回（2021年度）日本赤外線学会研究発表会  ( オンライン )  Poster (general)

    2021.10
    　
    　

  • Terahertz time-domain spectroscopy of GaAs epitaxial layers treated with the use of fast atom bombardment

    Hideo Takeuchi, Yuto Omuku, Ryota Onoda, Toshihiro Nakaoka, Jun Utsumi, Shigeo Kawasaki, and Masatoshi Koyama

    International conference  31st International Conference on Defects in Semiconductors (ICSD31) 2021  ( Oslo )  Poster (general)

    2021.07
    　
    　

  • Structural Analysis and Characterization of Bilayer AZO Thin Film Transistor by SolutionProcess

    Kazuyori Oura, Keisuke Takano, Hideo Wada, Masatoshi Koyama, Toshihiko Maemoto and Shigehiko Sasa

    International conference  33rd International Microprocesses and Nanotechnology Conference (MNC 2020)  ( Online )  Oral Presentation(general)

    2020.11
    　
    　

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