KOYAMA.Masatoshi

写真a

Title

Associate Professor

Research Fields, Keywords

Semiconductor engineering, Semiconductor devices, Physics of semiconductor, Semiconductor manufacturing processes
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Graduating School 【 display / non-display 】

  • Osaka Institute of Technology   Faculty of Engineering   Department of Electrical and Electronic Systems Engineering   Others

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Graduate School 【 display / non-display 】

  • Osaka Institute of Technology  Graduate School of Engineering  Electrical and Electronic Engineering  Doctor's Course  Completed  Others

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Degree 【 display / non-display 】

  • Osaka Institute of Technology -  Doctor(Engineering)  Physics of Semiconductor, Devices

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Association Memberships 【 display / non-display 】

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    The Electrochemical Society  Others

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Committee Memberships 【 display / non-display 】

  • 2021.04
    -
    2023.03

     

  • 2018.06
    -
    Now

     

  • 2019.09
    　
    　

     

  • 2022.06
    -
    Now

     

  • 2022.09
    　
    　

     

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Research field 【 display / non-display 】

  • Semiconductor engineering

  • Electron device/Electronic equipment

  • Physics of semiconductors

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Papers 【 display / non-display 】

  • Electron-beam Deposition with Low Spitting Platinum Source Material Improved by New Impurity Removal Processes

    Atsushi Kawashimo, Takahiro Kobayashi, Masatoshi Koyama, Yuichiro Shindo  ( Multiple Authorship )

    CS MANTECH Digest of papers     2024.05

    Research paper (international conference proceedings)  English

  • Fabrication and characterization of low barrier height InAs/GaxIn1-xAs/InAs heterostructure diodes toward millimeter-wave detection

    Moto Inou,; Masatoshi Koyama, Toshihiko Maemoto, and Shigehiko Sasa  ( Multiple Authorship )

    2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)     2023.10

    Research paper (international conference proceedings)  English

    DOI

  • Repeated bending durability evaluation of ZnO and Al-doped ZnO thin films grown on cyclo-olefin polymer for flexible oxide device applications

    K Oura, T Kumatani, H Wada, M Koyama, T Maemoto, S Shigehiko  ( Multiple Authorship )

    Japanese Journal of Applied Physics     2022.09

    Research paper (scientific journal)  English

    DOI

  • Decay time extension of terahertz electromagnetic waves emitted from coherent longitudinal optical phonons in GaAs epitaxial layers with the use of fast atom bombardment

    HIDEO TAKEUCHI, YUTO OMUKU, RYOTA ONODA, TOSHIHIRO NAKAOKA, JUN UTSUMI, SHIGEO KAWASAKI, MASATOSHI KOYAMA  ( Multiple Authorship )

    Optics Continuum     2022.09

    Research paper (scientific journal)  English

    DOI

  • Improved electrical performance of solution-processed zinc oxide-based thin-film transistors with bilayer structure

    Kazuyori Oura, Hideo Wada, Masatoshi Koyama, Toshihiko Maemoto, and Shigehiko Sasa  ( Multiple Authorship )

    Journal of Information Display   23   105 - 113   2021.12

    Research paper (scientific journal)  English

    DOI

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Research Grants and Projects 【 display / non-display 】

  • Project Year：2024.04  -  2025.03 

  • Project Year：2021.04  -  2024.03 

  • Project Year：2020.04  -  2024.03 

  • Project Year：2019.04  -  2022.03 

  • Project Year：2017.04  -  2021.03 

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Presentations 【 display / non-display 】

  • Electron-beam Deposition with Low Spitting Platinum Source Material Improved by New Impurity Removal Processes

    Atsushi Kawashimo, Takahiro Kobayashi, Masatoshi Koyama, and Yuichiro Shindo

    International conference  International Conference on Compound Semiconductor manufacturing Technology  ( Tuson, Arizona, U.S.A. )  Oral Presentation(general)

    2024.05
    　
    　

  • Low-temperature fabrication process of In2O3 thin-film transistors using aqueous precursor solution and excimer light

    Takeaki Komai, Ryosuke Kasahara, Hideo Wada, Masatoshi Koyama, Akihiko Fujii, Toshihiko Maemoto, Akihiro Shimizu, Noritaka Takezoe and Hiroyasu Ito

    International conference  International Meeting for Future Electron Devices, Kansai (IMFEDK)  ( Avanti Kyoto Hall, Kyoto, Japan) )  Poster (general)

    2023.11
    　
    　

  • Fabrication and characterization of low barrier height InAs/GaxIn1-xAs/InAs heterostructure diodes toward millimeter-wave detection

    Moto Inoue, Masatoshi Koyama, Toshihiko Maemoto, and Shigehiko Sasa

    International conference  48th CONFERENCE ON INFRARED, MILLIMETER AND TERAHERTZ WAVES  ( Montreal, Canada )  Poster (general)

    2023.09
    　
    　

  • Study for enhanced THz radiation using InGaSb/InAs heterostructures

    Yoshiyuki Takagi, Takayuki Hasegawa, Masatoshi Koyama, Toshihiko Maemoto, and Shigehiko Sasa

    International conference  14th Topical Workshop on Heterostructure Microelectronics  ( Hiroshima )  Poster (general)

    2022.08
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    2022.09

  • Can longitudinal optical phonons obtain longer decay time by introducing defects with the use of surface treatments? A terahertz time-domain spectroscopic study on GaAs epilayers

    HideoTakeuchi, Yuto Omuku, Ryota Onoda, Toshihiro Nakaoka, Jun Utsumi, Shigeo Kawasaki , Masatoshi Koyama

    International conference  International Conference on the Physics of Semiconductors 2022  ( Sydney, Australia )  Poster (general)

    2022.06
    　
    　

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