Papers - YOSHIYUKI HARADA

Growth of hexagonal-InN films on GaAs(001) substrates by electron cyclotron resonance plasma-assisted molecular-beam epitaxy

T. Yodo, Y. Fujii, T. Shimada, K. Tamoto and Y. Harada  ( Multiple Authorship )

Extended Abstracts of 24th Electronic Materials Symposium   H3   pp. 165-166   2005.07

Research paper (scientific journal)  English

Low temperature growth of cubic-GaN films on GaAs(001) substrates by electron cyclotron resonance plasma-assisted molecular-beam epitaxy

T. Yodo, T. Fukuyama, Y. Shiraishi, K. Fuchigami and Y. Harada  ( Multiple Authorship )

Extended Abstracts of 24th Electronic Materials Symposium   K11   pp. 249-250   2005.07

Research paper (scientific journal)  English

Growth of cubic-InN films on GaAs(001) substrates by electron cyclotron resonance plasma-assisted molecular-beam epitaxy

T. Yodo, T. Yamamoto, T. Kohyama, T. Nakamura and Y. Harada  ( Multiple Authorship )

Extended Abstracts of 24th Electronic Materials Symposium   H7   pp. 173-174   2005.07

Research paper (scientific journal)  English

Luminescence of excitons in mesoscopic ZnO particles

T. Hirai, Y. Harada, S. Hashimoto, T. Itoh and N. Ohno

Journal of Luminescence   112   pp. 196-199.   2005.01

Research paper (scientific journal)  English

Luminescence of bound excitons in ZnO:Zn phosphor powders

T. Hirai, Y. Harada, S. Hashimoto, T. Itoh, and N. Ohno  ( Multiple Authorship )

Journal of Luminescence   113   pp. 115-120   2005.01

Research paper (scientific journal)  English

Influences of In2O3 crystal grains formed by anneal on characteristics of hexagonal InN crystalline films grown on Si(111) substrates

Tokuo Yodo, Yasunobu Kitayama, Kazunari Miyaki, Hiroaki Yona, and Yoshiyuki Harada  ( Multiple Authorship )

Jpn. J. Appl. Phys.   43 ( 2A ) pp. L139-L141   2004.01

Research paper (scientific journal)  English

ECR-assisted MBE growth of In1-XGaXN heteroepitaxial films on Si

Tokuo Yodo, Yasunari Kitayama, Kazu-nari Miyaki, Hiroaki Yona, Yoshiyuki Harada  ( Multiple Authorship )

Superlattices and Microstrucures   36   pp. 547-561   2004.01

Research paper (scientific journal)  English

Visible Emissions Near 1.9-2.2 eV From Hexagonal InN Films Grown By Electron Cyclotron Resonance Plasma-Assisted Molecular-Beam Epitaxy

Tokuo Yodo, Yasunobu Kitayama, Kazunari Miyaki, Hiroaki Yona, Yoshiyuki, Harada, Kathryn E. Prince and K. Scott A. Butcher  ( Multiple Authorship )

J. Cryst. Growth   269   pp. 145-154   2004.01

Research paper (scientific journal)  English

Low temperature growth of GaN films on Si(111) substrates by electron cyclotron resonance plasma-assisted molecular-beam epitaxy

T. Yodo, R. Fujita, M. Yamada and Y. Harada  ( Multiple Authorship )

Extended Abstracts of 22th Electronic Materials Symposium     pp. 191-192   2003.07

Research paper (scientific journal)  English

Effect of substrate bias voltage under growth on characteristics of InN films grown by molecular-beam epitaxy assisted by electron cyclotron resonance plasma

H. Yona, Y. Harada and T. Yodo  ( Multiple Authorship )

Proc. of the 5th International Conference on Nitride Semiconductors, ICNS-5,     p. 411   2003.05

Research paper (scientific journal)  English

Visible emissions near 2.2 eV from InN films grown on Si (111) and sapphire (0001) substrates by electron cyclotron resonance plasma-assisted molecular-beam epitaxy

T. Yodo, H. Yona, Y. Harada, A. Sasaki and M. Yoshimoto  ( Multiple Authorship )

Proc. of the 5th International Conference on Nitride Semiconductors, ICNS-5,     p. 412   2003.05

Research paper (scientific journal)  English

Enhancement of band-edge photoluminescence of bulk ZnO single crystals coated with alkali halide

Y. Harada, and S. Hashimoto  ( Multiple Authorship )

Physical. Review   B68   pp.045421-1- 045421-4   2003.01

Research paper (scientific journal)  English

Visible emissions near 2.2 eV from InN films grown on Si (111) and sapphire (0001) substrates by electron cyclotron resonance plasma-assisted molecular-beam epitaxy

T. Yodo, H. Yona, Y. Harada, A. Sasaki and M. Yoshimoto

phys. stat. sol.   (c)0 ( 7 ) pp. 2802-2805   2003.01

Research paper (scientific journal)  English

Effect of substrate bias voltage under growth on characteristics of InN films grown by molecular-beam epitaxy assisted by electron cyclotron resonance plasma

H. Yona, Y. Harada and T. Yodo  ( Multiple Authorship )

phys. stat. sol.   (c)0 ( 7 ) pp. 2545-2548   2003.01

Research paper (scientific journal)  English

Characterization of polycrystalline GaN layers grown on alkali metal-free glass substrates by molecular-beam epitaxy assisted by electron cyclotron resonance plasma

T.Yodo, T.Hirano and Y.Harada  ( Multiple Authorship )

Extended Abstract of International Conference on Polycrystalline Semiconductors 2002     pp. 80   2002.09

Research paper (scientific journal)  English

Investigation of Initial Growth Process for GaN Heteroepitaxial Layers Grown on Si(001) and Si(111) Substrates by ECR-assisted MBE

T.Yodo and H.Ando and D.Nosei and Y.Harada and M.Tamura  ( Multiple Authorship )

J. Cryst. Growth   237-239   pp. 1104-1109   2002.08

Research paper (scientific journal)  English

Growth and characterization of InN heteroepitaxial layers grown on Si(111) substrates by molecular beam epitaxy assisted by electron cyclotron resonance plasma

T.Yodo, H.Yona, K.Iwai, N.Toyotomi and Y.Harada  ( Multiple Authorship )

21th Electronic Materials Symposium   B3   pp. 9-12   2002.06

Research paper (scientific journal)  English

Characterization of GaN layers grown on alkali metal-free glass substrates by molecular-beam epitaxy assisted by electron cyclotron resonance plasma

T.Yodo, T.Hirano and Y.Harada  ( Multiple Authorship )

21th Electronic Materials Symposium   B4   pp. 13-16   2002.06

Research paper (scientific journal)  English

Influences of substrate anneal before growth on initial growth process and characteristics for GaN heteroepitaxial layers grown on Si(111) substrates by electron cyclotron resonance plasma-assisted molecular-beam epitaxy

T.Yodo, M. Yamada, M. Araki, N. Enosaki, S. Umasaki, Y. Harada, A. Sasaki, and M. Yoshimoto  ( Multiple Authorship )

21th Electronic Materials Symposium   B14   pp. 37-40   2002.06

Research paper (scientific journal)  English

Instability of Cl-Related Deep Defects in ZnSe

Yoshiyuki Harada,Hiroyasu Nakata, Tyuzi Ohyama, Kazuhiro Ohkawa and Minoru Isshiki  ( Multiple Authorship )

Jpn. J. Appl. Phys.   41   pp..514-517   2002.02

Research paper (scientific journal)  English